Memory system having semiconductor memory device that performs verify operations using various verify voltages

ABSTRACT

A memory system includes a semiconductor memory device having memory cells arranged in rows and columns, and a controller configured to issue a write command with or without a partial page program command to the semiconductor memory device. The semiconductor memory device, in response to the write command issued without the partial page command, executes a first program operation on a page of memory cells and then a first verify operation on the memory cells of the page using a first verify voltage for all of the memory cells of the page, and in response to the write command issued with the partial page command, executes a second program operation on a subset of the memory cells of the page and then a second verify operation on the memory cells of the subset using one of several different second verify voltages corresponding to the subset.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application a continuation of U.S. patent application Ser. No.16/354,866, filed on Mar. 15, 2019, which is a continuation of U.S.patent application Ser. No. 15/876,713, filed on Jan. 22, 2018, now U.S.Pat. No. 10,276,243, issued on Apr. 30, 2019, which is a continuation ofU.S. patent application Ser. No. 15/588,560, filed on May 5, 2017, nowU.S. Pat. No. 9,911,498, issued Mar. 6, 2018, which is a continuation ofU.S. patent application Ser. No. 15/174,527, filed on Jun. 6, 2016, nowU.S. Pat. No. 9,721,666, issued on Aug. 1, 2017, which is based upon andclaims the benefit of priority from Japanese Patent Application No.2015-179942, filed on Sep. 11, 2015, the entire contents of each ofwhich are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a memory system.

BACKGROUND

A NAND flash memory in which memory cells are arranged in threedimensions is known.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a memory system according to a firstembodiment.

FIG. 2 is a circuit diagram of a block of memory cells included in asemiconductor memory device according to the first embodiment.

FIG. 3 is a sectional view of the block of memory cells included in thesemiconductor memory device according to the first embodiment.

FIG. 4 is a conceptual diagram of a page of memory cells in thesemiconductor memory device according to the first embodiment.

FIG. 5 is a write condition table employed in the semiconductor memorydevice according to the first embodiment.

FIG. 6 is a flowchart illustrating an operation of a controller of thememory system according to the first embodiment.

FIG. 7 is a timing chart illustrating a first command sequence of amemory system according to the first embodiment.

FIG. 8 is a timing chart illustrating a second command sequence of thememory system according to the first embodiment.

FIG. 9 is a timing chart illustrating a third command sequence of thememory system according to the first embodiment.

FIG. 10 is a flowchart illustrating an operation of the semiconductormemory device according to the first embodiment.

FIG. 11 is a conceptual diagram of pre-verify operation that is executedby the semiconductor memory device according to the first embodiment.

FIG. 12 is a timing chart illustrating voltage changes of varioussignals during a write operation in first or second mode of thesemiconductor memory device according to the first embodiment.

FIG. 13 is a timing chart illustrating voltage changes of varioussignals during the write operation in a third mode of the semiconductormemory device according to the first embodiment.

FIG. 14 is a schematic diagram of a first part of the write operation inthe third mode of the semiconductor memory device according to the firstembodiment.

FIG. 15 is a schematic diagram of a second part of the write operationin the third mode of the semiconductor memory device according to thefirst embodiment.

FIG. 16 is a schematic diagram of a final part of the write operation inthe third mode of the semiconductor memory device according to the firstembodiment.

FIG. 17 is a schematic diagram illustrating changes in a thresholdvoltage distribution of memory cells different zones of thesemiconductor memory device according to the first embodiment.

FIG. 18 is a timing chart illustrating changes in a word line voltage ofthe semiconductor memory device according to the first embodiment.

FIG. 19 is a conceptual diagram of a page of memory cells in asemiconductor memory device according to a second embodiment.

FIG. 20 is a condition table employed in the semiconductor memory deviceaccording to the second embodiment.

FIG. 21 is a flowchart illustrating an operation of a controlleraccording to the second embodiment.

FIG. 22 is a timing chart illustrating a command sequence of a memorysystem according to the second embodiment.

FIG. 23 is a flowchart illustrating an operation of the semiconductormemory device according to the second embodiment.

FIG. 24 is a timing chart illustrating a command sequence of a memorysystem according to a third embodiment.

FIG. 25 is a flowchart illustrating an operation of a semiconductormemory device according to the third embodiment.

FIG. 26 is a schematic diagram illustrating changes in a thresholdvoltage distribution of memory cells when memory cells in zones otherthan a final zone is written in a semiconductor memory device accordingto a modification example of the first to third embodiments.

FIG. 27 is a schematic diagram illustrating changes in a thresholdvoltage distribution of memory cells when memory cells in a final zoneis written in the semiconductor memory device according to themodification example of the first to third embodiments.

FIG. 28 is a schematic diagram illustrating changes in a thresholdvoltage distribution of memory cells when pre-verify is selected whilewriting to a second zone in the semiconductor memory device according tothe modification example of the first to third embodiments.

DETAILED DESCRIPTION

Embodiments provide a memory system that can improve reliability ofoperation.

In general, according to one embodiment, a memory system includes asemiconductor memory device having memory cells arranged in rows andcolumns, and a controller configured to issue a write command with orwithout a partial page program command to the semiconductor memorydevice. The semiconductor memory device, in response to the writecommand issued without the partial page command, executes a firstprogram operation on a page of memory cells and then a first verifyoperation on the memory cells of the page using a first verify voltagefor all of the memory cells of the page, and in response to the writecommand issued with the partial page command, executes a second programoperation on a subset of the memory cells of the page and then a secondverify operation on the memory cells of the subset using one of severaldifferent second verify voltages corresponding to the subset.

Hereinafter, embodiments will be described with reference to thedrawings. In the following description, common reference numerals aregiven to configuration elements having the same function andconfiguration.

1. First Embodiment

A memory system according to a first embodiment will be described.Hereinafter, a three-dimensional stacked NAND flash memory, in which thememory cells are arranged in three dimensions and stacked above asemiconductor substrate, is described as an example of a semiconductormemory device.

1.1 Configuration

1.1.1. Entire Configuration of Memory System

First, a general configuration of the memory system according to theembodiment will be described with reference to FIG. 1.

As illustrated in FIG. 1, a memory system 1 includes a NAND flash memory100 and a controller 200. The NAND flash memory 100 and the controller200 may, for example, make up one semiconductor memory device by acombination thereof and, examples thereof include a memory card such asa SD™ card, a solid state drive (SSD), and the like.

The NAND flash memory 100 includes a plurality of memory cells andstores data in a non-volatile manner. The controller 200 is connected tothe NAND flash memory 100 by a NAND bus and is connected to a hostapparatus 300 by a host bus. The controller 200 controls the NAND flashmemory 100 and accesses the NAND flash memory 100 in response to acommand received from the host apparatus 300. The host apparatus 300 is,for example, a digital camera, a personal computer, and the like, andthe host bus is, for example, a bus configured in accordance with an SD™interface protocol.

Signals are transmitted through the NAND bus in accordance with a NANDinterface protocol. Specific examples of the signals are an addresslatch enable signal ALE, a command latch enable signal CLE, a writeenable signal WEn, a read enable signal REn, a ready and busy signalRBn, and an input and output signal I/O.

The signals CLE and ALE are signals notifying the NAND flash memory 100that the input signals I/O to the NAND flash memory 100 are signalscontaining a command and an address, respectively. The signal WEn is asignal that is asserted at a low level and is provided to notify theNAND flash memory to accept the signal I/O as an input. The signal Renis a signal that is also asserted at a low level and is provided tonotify the NAND flash memory 100 to output data through the signal I/O.The ready and busy signal RBn is a signal indicating whether the NANDflash memory 100 is in a ready state (state that can receive a commandfrom the controller 200) or is in a busy state (state that cannotreceive the command from the controller 200), and the low levelindicates the busy state. The input and output signal I/O is, forexample, an 8-bit signal. The input and output signal I/O contains thedata that is transmitted and received between the NAND flash memory 100and the controller 200, and may include a command, an address, writedata, read data, status information of the NAND flash memory 100, andthe like.

1.1.2 Configuration of Controller 200

The configuration of the controller 200 will be described in detail withreference to FIG. 1. As illustrated in FIG. 1, the controller 200includes a host interface circuit 210, a built-in memory (RAM) 220, aprocessor (CPU) 230, a buffer memory 240, and a NAND interface circuit250.

The host interface circuit 210 is connected to the host apparatus 300via the host bus and transfers command and data received from the hostapparatus 300 to the processor 230 and the buffer memory 240,respectively. In addition, the host interface circuit 210 transfers datawithin the buffer memory 240 to the host apparatus 300 in response tothe command of the processor 230.

The processor 230 controls the entire operation of the controller 200.For example, the processor 230 issues a write command to the NANDinterface circuit 250 in response to a write command received from thehost apparatus 300. The same is true when reading and erasing. Inaddition, the processor 230 executes various processes such as wearleveling for managing the NAND flash memory 100.

The NAND interface circuit 250 is connected to the NAND flash memory 100via the NAND bus and performs communication with the NAND flash memory100. The NAND interface circuit 250 outputs the signals ALE, CLE, WEn,and REn based on the command received from the processor 230 to the NANDflash memory 100. In addition, a write command issued by the processor230 and write data within the buffer memory 240 are transferred as theinput and output signal I/O to the NAND flash memory 100 during writing.Furthermore, a read command issued by the processor 230 is transferredas the input and output signal I/O to the NAND flash memory 100, anddata read from the NAND flash memory 100 is received as the input andoutput signal I/O and transferred to the buffer memory 240.

The buffer memory 240 temporarily stores the write data or the readdata.

The built-in memory 220 is, for example, a semiconductor memory such asa DRAM and is used as a work area of the processor 230. The built-inmemory 220 also stores firmware for managing the NAND flash memory 100,various management tables, and the like.

1.1.3 Configuration of NAND Flash Memory 100

1.1.3.1 Entire Configuration of NAND Flash Memory 100

Next, a configuration of the NAND flash memory 100 will be described. Asillustrated in FIG. 1, the NAND flash memory 100 includes a memory cellarray 110, row decoders 120 (120-0 to 120-3), a sense amplifier 130, acolumn selector 140, a column decoder 150, an address register 160, acommand register 170, and a sequencer 180.

The command register 170 temporarily stores a command CMD received fromthe controller 200.

The address register 160 temporarily stores an address ADD received fromthe controller 200, and transfers a row address RA to the row decoder120 and transfers a column address CA to the column decoder 150.

The memory cell array 110 includes, for example, four blocks BLK (BLK0to BLK3) that include a plurality of nonvolatile memory cells arrangedin rows and columns. Then, the memory cell array 110 stores datatransferred from the controller 200.

Each of row decoders 120-0 to 120-3 is provided for one of the blocksBLK0 to BLK3 and decodes the row address RA received from the addressregister 160. Then, the row decoders 120-0 to 120-3 output a voltagerespectively to the corresponding blocks BLK0 to BLK3 based on a resultof decoding of the row address RA.

The column decoder 150 decodes the column address CA received from theaddress register 160. Then, the column selector 140 selects acorresponding column based on a result of decoding of the column addressCA in the column decoder 150.

The sense amplifier 130 senses data read from the memory cell array 110during a reading operation. Then, the sense amplifier 130 outputs dataDAT corresponding to a column selected by the column selector 140 to thecontroller 200. The sense amplifier 130 transfers the write data DATreceived from the controller 200 to an area of the memory cell area 110corresponding to a column selected by the column selector 140 during awriting operation.

The sequencer 180 controls an entire operation of the NAND flash memory100 based on the command CMD stored in the command register 170.

1.1.3.2 Configuration of Block BLK

A configuration of the block BLK will be described with reference toFIG. 2. As illustrated in FIG. 2, the block BLK includes, for example,four string units SU (SU0 to SU3). In addition, each string unit SUincludes a plurality of NAND strings 10.

Each NAND string 10 includes, for example, eight memory cell transistorsMT (MT0 to MT7) and select transistors ST1 and ST2. The memory celltransistor MT includes a control gate and a charge storage layer, andstores data in a non-volatile manner. The memory cell transistor MT isconnected between a source of the select transistor ST1 and a drain ofthe select transistor ST2 in series.

The gate of the select transistor ST1 is connected to each of selectgate lines SGD0 to SGD3 in each of the string units SU0 to SU3. On theother hand, the gate of the select transistor ST2 in each of the stringunits SU0 to SU3 is, for example, commonly connected to a select gateline SGS. Of course, in alternative embodiments, the gate of the selecttransistor ST2 may be connected to different select gate lines SGS0 toSGS3 for each string unit. In addition, control gates of memory celltransistors MT0 to MT7 within the same block BLK are commonly connectedto word lines WL0 to WL7, respectively.

In addition, the drain of the select transistor ST1 of the NAND string10 in the same column within the memory cell array 110 is commonlyconnected to one of bit lines BL (BL0 to BL(L−1)) (where (L−1) is anatural number of 2 or more). That is, the bit lines BL commonly connectthe NAND strings 10 across a plurality of the blocks BLK. Furthermore,the sources of a plurality of the select transistors ST2 are commonlyconnected to a source line SL.

That is, the string unit SU is a group of the NAND strings 10 that areconnected to a different bit line BL and commonly connected to the sameselect gate line SGD. In addition, the block BLK is a group of thestring units SU in which the word lines WL are common. The memory cellarray 110 is a group of the blocks BLK in which the bit lines BL arecommon.

FIG. 3 is a sectional view of an area of a part of the block BLK. Asillustrated in FIG. 3, a plurality of the NAND strings 10 are formedabove a p-type well region 20. That is, for example, four layers ofwiring layers 27 functioning as the select gate line SGS, eight layersof wiring layers 23 functioning as the word lines WL0 to WL7, and, forexample, four layers of wiring layers 25 functioning as the select gateline SGD are sequentially stacked above the well region 20. Aninsulating film (not illustrated) is formed between the stacked wiringlayers.

A pillar-shaped semiconductor 31 reaching the well region 20 through thewiring layers 25, 23, and 27 is formed. On a side of the semiconductor31, a gate insulating film 30, a charge storage layer (insulating film)29, and a block insulating film 28 are sequentially formed. As a result,the memory cell transistors MT, and the select transistors ST1 and ST2are formed. The semiconductor 31 functions as a current path of the NANDstring 10 and is a region in which a channel of each transistor isformed. The upper end of the semiconductor 31 is connected to a metalwiring layer 32 functioning as the bit line BL.

An n⁺ type impurity diffusion layer 33 is formed within a surface regionof the well region 20. A contact plug 35 is formed on the diffusionlayer 33 and the contact plug 35 is connected to a metal wiring layer 36functioning as the source line SL. Furthermore, a p⁺ type impuritydiffusion layer 34 is formed within the surface region of the wellregion 20. A contact plug 37 is formed on the diffusion layer 34 and thecontact plug 37 is connected to a metal wiring layer 38 functioning aswell wiring CPWELL. The well wiring CPWELL is wiring for applying apotential to the semiconductor 31 via the well region 20.

A plurality of structures having the above-described configurations arearranged in a depth direction of paper surface of FIG. 3 and the stringunit SU is a group of the NAND strings 10 arranged in the depthdirection.

In addition, erasing of data can be performed in a block BLK unit or aunit smaller than the block BLK. Such erase methods are described in“NONVOLATILE SEMICONDUCTOR MEMORY DEVICE” of U.S. patent applicationSer. No. 13/235,389, filed on Sep. 18, 2011, in “NON-VOLATILESEMICONDUCTOR MEMORY DEVICE” of U.S. patent application Ser. No.12/694,690, filed on Jan. 27, 2010, and in “NONVOLATILE SEMICONDUCTORMEMORY DEVICE AND DATA ERASE METHOD THEREOF” of U.S. patent applicationSer. No. 13/483,610, filed on May 30, 2012. All of these patentapplications are incorporated by reference herein in their entirety.

Furthermore, the memory cell array 110 may have another configuration,such as the configuration of the memory cell array described in “THREEDIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY” of U.S. patentapplication Ser. No. 12/407,403, filed on Mar. 19, 2009, in “THREEDIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY” of U.S. patentapplication Ser. No. 12/406,524, filed on Mar. 18, 2009, in“NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURINGTHE SAME” of U.S. patent application Ser. No. 12/679,991, filed on Mar.25, 2010, and in “SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURINGSAME” of U.S. patent application Ser. No. 12/532,030, filed on Mar. 23,2009. All of these patent applications are incorporated by referenceherein in their entirety.

1.1.3.3 Types of Block BLK and Write Unit of Data

Next, types of the block BLK and write unit of data will be described.

The block BLK according to the embodiment may be a multi-level cell(MLC) block, a single-level cell (SLC) block, or a 4 partial pageprogram (PPP) block.

MLC Block and SLC Block

In the MLC block and the SLC block, writing of the data issimultaneously performed on the memory cell transistors MT connected toany one of the word lines WL in any one of the string units SU. Thisunit of writing is referred to as “page”.

The SLC block is a block in which one memory cell transistor MT iscapable of storing data of one bit. On the other hand, in the MLC block,one memory cell transistor MT is capable of storing data of two bits ormore. For example, in a case where two-bit data is stored, writing ofthe data is performed for each low-order bit (lower page) and for eachhigh-order bit (upper page) of two-bit data. Thus, the number of pageswritten per writing operation in the MLC block is two times the numberof the pages written per writing operation in the SLC block.

4 PPP Block

The 4 PPP block is a block in which writing is performed in a unit sizeof ¼ of one page. FIG. 4 is a schematic diagram illustrating arelationship between one page data in the 4 PPP block and columnaddresses corresponding to different data positions.

The sense amplifier 130 includes a page buffer capable of storing datafor one page and each bit of one page data stored in the page buffer isapplied to the bit line BL during writing. Thus, FIG. 4 may be referredto as a schematic diagram of the page buffer. In addition, hereinafter,a case where the page size is 16K bytes is described as an example.

As illustrated in FIG. 4, in the 4 PPP block, one page includes fourzones ZN (ZN0 to ZN3), where each zone ZN has a size of 4 KB, that is ¼of 16 KB.

In the memory cell array 110, each of the bit lines BL is specified tocorrespond to a “column” unit, where one “column” includes, for example,8 bit lines BL. For example, bit lines BL0 to BL7 correspond to a columnin which the column address CA0 is specified and bit lines BL8 to BL15correspond to a column in which the column address CA1 is specified.

In the leading zone ZN0, the leading address is CA0 and the finaladdress is CA4095 (CA(4K−1)). In the next zone ZN1, the leading addressis CA4096 (CA4K) and the final address is CA8191 (CA(8K−1)). In the nextzone ZN2, the leading address is CA8192 (CA8K) and the final address isCA12287 (CA(12K−1)). Then, in the final zone ZN3, the leading address isCA12288 (CA12K) and the final address is CA16383 (CA(16K−1)).

In the 4 PPP block, data is written in a zone unit of 4 KB. In otherwords, writing of the data is instructed in units of the page, but datais actually written in one of selected zone and writing of the data isactually prohibited in the other, unselected zones ZN.

When writing data with respect to the 4 PPP block, write conditions aredifferent depending on which zone ZN is selected for writing. FIG. 5 isa conceptual diagram of a table (hereinafter, referred to as a conditiontable) indicating a relationship between each zone ZN and the writeconditions. The condition table is stored in, for example, any one ofthe blocks BLK, is read upon power-on to the NAND flash memory 100, andis stored in, for example, a register within the sequencer 180. Then,the sequencer executes the write operation based on the condition table.

As illustrated in FIG. 5, for each zone, the condition table holds averify voltage VCG_Z that is used during program verify, a step-up widthΔVPGM of a program voltage VPGM that is used during program, andinformation about whether or not pre-verify is performed before program.

In the example of FIG. 5, when selecting the leading zone ZN0, theverify voltage that is used during program verify is VCG_Z0, the step-upwidth is ΔVPGM_Z0, and pre-verify is not performed. When selecting thezone ZN1, the verify voltage is VCG_Z1, the step-up width is ΔVPGM_Z1,and pre-verify may be performed or may not be performed. When selectingthe zone ZN2, the verify voltage is VCG_Z2, the step-up width isΔVPGM_Z2, and pre-verify may be performed or may not be performed. Whenselecting the final zone ZN3, the verify voltage is VCG_Z3, the step-upwidth is ΔVPGM_Z3, and pre-verify is performed.

The following relationship is satisfied in the verify level VCG_Z. Thatis,VCG_Z0≤VCG_Z1≤VCG_Z2<VCG_Z3In addition, the following relationship is satisfied in the step-upwidth ΔVPGM. That is,ΔVPGM_Z0≥ΔVPGM_Z1≥ΔVPGM_Z2>ΔVPGM_Z3Details of pre-verify will be described below.

1.2 Write Operation

Next, the write operation of the memory system 1 including theabove-described configuration will be described.

1.2.1 Operation of Controller 200

First, an operation of the controller 200 will be described withreference to FIG. 6. Each step of FIG. 6 is executed under control ofthe processor 230.

As illustrated in FIG. 6, the controller 200 receives write datatogether with a write command from the host apparatus 300 (step S10).Then, the processor 230 causes the buffer memory 240 to store thereceived write data (step S11) and determines whether or not thereceived write data is necessary to be immediately made nonvolatile(step S12).

If it is not necessary for the received write data to be immediatelymade nonvolatile (step S12, NO), the process is completed. In this case,the controller 200 writes the write data to the NAND flash memory 100 atan arbitrary timing such as at a time when a write command is furtherreceived from the host apparatus 300 or during an idle time of thecontroller 200 and the NAND flash memory 100.

If it is necessary for the received write data to be immediately madenonvolatile (step S12, YES), the processor 230 determines a size of thewrite data (step S13). If the data size is not at least 4 KB (step S13,NO), the processor 230 determines whether or not data is to be writtenin an SLC mode (step S14). In the SLC mode data is written to the SLCblock. That is, the SLC mode is a mode in which data of one bit iswritten to one memory cell transistor.

If writing is not necessary in the SLC mode (step S14, NO), theprocessor 230 selects an MLC mode. In the MLC mode, data is written tothe MLC block. That is, the MLC mode is a mode in which multi-bit datais written to one memory cell transistor. Then, the NAND interfacecircuit 250 issues a normal program command to the NAND flash memory 100in response to the command of the processor 230 (step S15).Subsequently, the processor 230 outputs a page address (row address) andthe write data corresponding to the MLC block to the NAND flash memory100 via the NAND interface circuit 250. The page address is an addresscorresponding to the next page of the page to which writing was lastperformed in the MLC block.

If writing is necessary in the SLC mode (step S14, YES), the processor230 selects the SLC mode. Then, first, the NAND interface circuit 250issues an SLC command to the NAND flash memory 100 in response to thecommand of the processor 230 (step S16). Sequentially, the NANDinterface circuit 250 issues the normal program command (step S15). TheSLC command is a command to make the NAND flash memory 100 be in the SLCmode. Subsequently, the processor 230 outputs the page address and thewrite data corresponding to the SLC block BLK to the NAND flash memory100 via the NAND interface circuit 250. The page address is an addresscorresponding to the next page of the page to which writing was lastperformed in the SLC block.

In step S13, if the data size is at least 4 KB (step S13, YES), theprocessor 230 selects a PPP mode. As described with reference to FIG. 4,the PPP mode is a mode in which data is written in a zone unit of whicha size is less than the page size, e.g., 4 KB instead of 16 KB. Then,first, in response to the command of the processor 230, the NANDinterface circuit 250 issues a PPP command to the NAND flash memory 100(step S17) and subsequently, issues the SLC command and the normalprogram command sequentially (steps S16 and S15). Furthermore, theprocessor 230 outputs the page address corresponding to the PPP block,and the column address and the write data corresponding to the selectedzone to the NAND flash memory 100 via the NAND interface circuit 250.The page address is an address of the next page to the last written pagein the PPP block. In addition, the column address corresponds to anaddress to the next zone ZN (i+1) of the last written zone ZNi in thePPP block (i is a natural number and any one of 0, 1, 2, and 3 in theexample of FIG. 4). For example, in FIG. 4, if data of the zones ZN0 andZN1 is written, CA8192 corresponding to a leading column address of thenext zone ZN2 is issued.

Next, a command sequence between the controller 200 and the NAND flashmemory 100 will be described.

MLC Mode

First, the command sequence during the MLC mode will be described withreference to FIG. 7. As illustrated in FIG. 7, first, the controller 200issues a normal write command “80H” (corresponding to step S15 of FIG.6) and asserts the signal CLE (“H” level). Subsequently, the controller200 issues addresses (CA: the column address and RA: the row address)over, for example, 5 cycles and asserts the signal ALE (“H” level). Thecommand and address are respectively stored in the registers 170 and160. Then, the sequencer 180 recognizes that write access by the MLCmode is received because the PPP command and the SLC command are notstored but the normal write command “80H” is stored in the register 170.

Next, the controller 200 outputs write data Din over a plurality ofcycles. During this period, the signals ALE and CLE are negated (“L”level). The write data Din received by the NAND flash memory 100 isstored in the page buffer within the sense amplifier 130.

Next, the controller 200 issues a write command “10H” and asserts theCLE. The sequencer 180 starts the write operation and the NAND flashmemory 100 is in a busy state in response to that the command “10H” isstored in the register 170 (RBn=“L”). Moreover, the controller 200asserts WEn (“L” level) whenever signals such as a command, an address,and data are issued. Then, the signals are input into the NAND flashmemory 100 whenever the WEn is toggled.

SLC Mode

Next, a command sequence during an SLC mode will be described withreference to FIG. 8. As illustrated in FIG. 8, the SLC mode is differentfrom the MLC mode described in FIG. 7 in that the controller 200 firstissues an SLC command “A2H” (corresponding to step S16 of FIG. 6).Thereafter, the controller 200 issues the normal write command “80H”.The PPP command is not stored and the SLC command “A2H” and the normalwrite command “80H” are stored in the register 170 and thereby thesequencer 180 recognizes that the write access by the SLC mode isreceived.

PPP Mode

Next, the command sequence during the PPP mode will be described withreference to FIG. 9. As illustrated in FIG. 9, the PPP mode is differentfrom the SLC mode described in FIG. 8 in that the controller 200 issuesa PPP command “XH” before the SLC command “A2H” (corresponding to stepS17 of FIG. 6). Thereafter, the controller 200 issues the SLC command“A2H” and the normal write command “80H”. The PPP command “XH”, the SLCcommand “A2H”, and the normal write command “80H” are stored in theregister 170, and thereby the sequencer 180 recognizes that the writeaccess by the PPP mode is received.

1.2.2 Operation of NAND Flash Memory 100

Next, an operation of the NAND flash memory 100 will be described withreference to FIG. 10. A process of FIG. 10 is started in response tothat the command “10H” is stored in the command register 170 and isexecuted under control of the sequencer 180.

The command received from the controller 200 is stored in the commandregister 170 and the address is stored in the address register 160. Ifthe PPP command is not stored (step S20, NO) and the SLC command is notstored in the command register 170 (step S21, NO), the sequencer 180executes a program in the MLC mode (step S22). That is, if only thenormal write command “80H” is applied, data is written to the MLC blockin the page unit.

If the PPP command is not stored (step S20, NO), but the SLC command isstored (step S21, YES) in the command register 170, the sequencer 180executes a program in the SLC mode (step S23). That is, if the SLCcommand “A2H” and the normal write command “80H” are applied, data iswritten to the SLC block in the page unit.

If the PPP command “XH” is stored in the command register 170 (stepS20), the sequencer 180 executes a program in the PPP mode. The columndecoder 150 decodes the column address CA applied from the addressregister 160. Then, if the column address CA is equal to or greater thanCA12K (step S24, YES), the column selector 140 selects the zone ZN3(step S25). As a result, the write data received from the controller 200is stored in a region corresponding to the zone ZN3 in the page bufferin the sense amplifier 130. Subsequently, the sequencer 180 executespre-verify (step S26) and executes writing by the PPP mode based on aresult of pre-verify (step S27).

Pre-verify of step S26 and writing by the PPP mode of step S27 will bedescribed with reference to FIG. 11. FIG. 11 illustrates a thresholdvoltage distribution of the memory cell transistors corresponding to thezones ZN0 to ZN2 and a threshold voltage distribution of the memory celltransistor corresponding to the zone ZN3.

As illustrated in FIG. 11, data is already written in the memory celltransistors corresponding to the zones ZN0 to ZN2 in the page when thezone ZN3 is selected. According to the example of FIG. 11, a thresholdvoltage of the memory cell transistor of “1” data (erased state) is, forexample, a negative value. A threshold voltage of the memory celltransistor of “0” data is higher than that of “1” data (for example, apositive value). In addition, as described above with reference to FIG.5, the verify voltages VCG_Z0, VCG_Z1, and VCG_Z2 used in the zones ZN0to ZN2 are smaller than the verify voltage VCG_Z3 used in the zone ZN3.

In such a situation, pre-verify of step S26 is an operation to specifymemory cells in zones ZN0 to ZN2 that store the “0” data and have athreshold voltage less than VCG_Z3. The distribution of the transistorsthat is specified as described above is indicated by a hatched region inFIG. 11.

In addition, in the program step S27, of course, the data of the zoneZN3 is written in the memory cell transistor. In this case, since theVCG_Z3 is used as the verify voltage, writing is performed on the memorycell transistor that is specified by pre-verify in addition to thememory cell transistors in zone ZN3. As a result, the threshold voltagesof the memory cell transistors storing the “0” data are all equal to orgreater than VCG_Z3 in all the zones ZN0 to ZN3.

The description will be continued returning to FIG. 10. If the columnaddress CA is equal to or less than CA(4K−1) (step S28, YES), the columnselector 140 selects the zone ZN0 (step S29). As a result, the writedata received from the controller 200 is stored in a regioncorresponding to the zone ZN0 in the page buffer in the sense amplifier130. In this case, the sequencer 180 performs writing in the SLC modewithout performing pre-verify (step S30). The VCG_Z0 is used as theverify voltage. Writing to the memory cell transistors corresponding tothe zones ZN1 to ZN3 is prohibited (in other words, the “1” data isprogrammed in zones ZN1 to ZN3).

If the column address CA is equal to or greater than CA8K and equal toor less than CA(12K−1) (step S31, YES), the column selector 140 selectsthe zone ZN2 (step S32). As a result, the write data received from thecontroller 200 is stored in a region corresponding to the zone ZN2 inthe page buffer in the sense amplifier 130. Then, the sequencer 180confirms whether or not pre-verify is enabled (step S33). If it isenabled (step S33, YES), pre-verify is performed (step S34). The memorycell transistor to be specified in pre-verify of step S34 stores the “0”data in the zones ZN0 and ZN1, and is a memory cell transistor having athreshold voltage that is less than VCG_Z2. Then, writing is executed inthe memory cell transistor corresponding to the zone ZN2 in the SLC mode(step S35). Moreover, since the memory cell transistor corresponding tothe zone ZN3 has to be in the erased state, writing to the memory celltransistors is prohibited. In step S33, if pre-verify is enabled (stepS33, YES), in step S35, writing is executed in the memory celltransistor specified in step S33 in addition to the memory celltransistor corresponding to the zone ZN2. As a result, the thresholdvoltages of the memory cell transistors storing the “0” datacorresponding to the page are all equal to or greater than VCG_Z2. Instep S33, if pre-verify is disabled (step S33, NO), in step S35, writingto the memory cell transistors corresponding to the zones ZN0, ZN1, andzone ZN3 is prohibited.

If the column address CA is equal to or greater than CA4K and equal toor less than CA(8K−1) (step S31, NO), the column selector 140 selectsthe zone ZN1 (step S36). As a result, write data received from thecontroller 200 is stored in a region corresponding to the zone ZN1 inthe page buffer in the sense amplifier 130. Then, the same process asthe case where the zone ZN2 is selected is performed. That is, first,pre-verify is performed if necessary (step S38). The memory celltransistor specified by pre-verify of step S38 stores the “0” data inthe zone ZN0 and is a memory cell transistor having a threshold voltagethat is less than VCG_Z1. Then, writing is executed to the memory celltransistor corresponding to the zone ZN1 in the SLC mode (step S39).

Next, an operation of the NAND flash memory 100 during writing describedabove will be described with reference to FIGS. 12 and 13.

MLC Mode and SLC Mode

First, an operation during the MLC mode and the SLC mode will bedescribed with reference to FIG. 12.

In the MLC mode and the SLC mode, first, a data program operation isexecuted. As illustrated in FIG. 12, at time to, the row decoder 120selects the MLC block or the SLC block and selects any one of the stringunits SU in a selected block in compliance with the row address RAapplied from the register 160. Then, the row decoder 120 applies avoltage VSGD_prog to the select gate line SGD0 of the selected stringunit SU. The voltage VSGD_prog is a voltage turning on the selecttransistor ST1. Furthermore, the row decoder 120 applies 0 V to theselect gate line SGS and the select gate line SGD of a non-selectedstring unit.

In addition, the sense amplifier 130 applies, for example, 0 V to thebit line BL in which the “0” data is written and applies a positivevoltage VDD (>0 V) to the bit line BL in which the “1” data is writtenbased on the write data stored in the page buffer (time t1). Writing ofthe “0” data is a write operation in which a threshold voltage of thememory cell transistor MT is increased by injecting electrons into thecharge storage layer of the memory cell transistor MT and, as a result,a threshold voltage level is transitioned to a higher level. On theother hand, writing of the “1” data is a write operation in which thethreshold voltage level is maintained by suppressing the injection ofthe electrons into the charge storage layer of the memory celltransistor MT (that is, it may be said that the threshold voltage issubstantially unchanged and writing is prohibited).

Subsequently, at time t2, the row decoder 120 applies a voltage VSGD(for example, VSGD_prog>VSGD) to the select gate line SGD of the selectstring unit SU. The voltage VSGD_prog is a voltage that is capable oftransferring the voltage VDD to the select transistor ST1. On the otherhand, the voltage VSGD is a voltage that is capable of transferring 0 Vto the select transistor ST1, but is not capable of transferring thevoltage VDD. Thus, the select transistor ST1 corresponding to the bitline BL in which the “1” data is written is in a cut-off state.

Next, at time t3, the row decoder 120 applies a voltage VPASS to theword line WL of the selected block. Subsequently, the row decoder 120increases a voltage applied to the selected word line WL from the VPSSto the VPGM (time t4). Thus, data is written to the memory celltransistor MT connected to the selected word line WL in the selectstring unit SU in the page unit. The voltage VPASS is a voltage thatcauses the memory cell transistor MT to be a state of being turned onand a potential of the channel within the NAND string 10 correspondingto writing of the “1” data to be sufficiently increased by capacitivecoupling irrespective of data stored therein. In addition, the voltageVPGM is a high voltage that is capable of injecting the electrons intothe charge storage layer by FN tunneling.

In a period of times t4 to t5, after data is programmed, each wiringbecomes 0 V (time t7).

Thus, if the data program is completed, the sequencer 180 executesprogram verify. Program verify is an operation to determine whether ornot the memory cell transistor is increased to the threshold voltagelevel that is a target by the data program in times t4 to t5.

That is, at time t8, the row decoder 120 applies the voltage VSG to theselect gate lines SGD and SGS in the select string unit SU. The voltageVSG is a voltage in which the select transistors ST1 and ST2 are in astate of being turned on. Subsequently, the sense amplifier 130 appliesa voltage Vb1 (<VDD) to the bit line BL and the row decoder 120 appliesa voltage VREAD to a non-selected word line WL of the selected block.The voltage VREAD is a voltage in which the memory cell transistor is inthe state of being turned on irrespective of data stored therein (timet9). Furthermore, the row decoder 120 applies a program verify voltageVpvfy to the selected word line WL (time t10). In the example of FIG. 5,the Vpvfy is equal to the VCG_Z3 and is a threshold voltage to be finaltarget in the memory cell transistor.

As a result, if the memory cell transistor connected to the selectedword line WL is in the state of being turned off, a cell current doesnot flow through the bit line BL and the bit line BL passes programverify. On the other hand, if the memory cell transistor is in the stateof being turned on, the cell current flows through the bit line BL andthe bit line BL fails program verify.

Hereinafter, the program and the program verify are repeated for the bitline BL that failed the program verify. In this case, the value of thevoltage VPGM is stepped up by ΔVPGM when the program is repeated.

Moreover, in the example of FIG. 12, the program verify voltage Vpvfy isa constant value, but in a case of the MLC mode, the Vpvfy is alsostepped up in accordance with the threshold voltage.

PPP Mode

Next, an operation during the PPP mode will be described with referenceto FIG. 13. Hereinafter, differences from the MLC mode and the SLC modedescribed in FIG. 12 will be described.

In the PPP mode, first, the sequencer 180 executes pre-verify in aperiod of times t20 to t0 before the data program.

As illustrated in FIG. 13, first, similar to during the program verify,the row decoder 120 applies the voltage VSG to the select gate lines SGDand SGS of the select string unit SU, and causes the select transistorsST1 and ST2 to be in the state of being turned on (time t20).Subsequently, at time t21, the sense amplifier 130 charges the voltageVb1 to the bit line BL and the row decoder 120 applies the voltage VREADto the non-selected word line WL. In this state, the row decoder 120applies a voltage VCGR to the selected word line WL at time t22. Asillustrated in FIG. 11, the voltage VCGR is a voltage that is capable ofdetermining the “1” data and the “0” data, a value thereof is less thanthe VCG_Z0, and the voltage VCGR is greater than a maximum value of anobtained threshold voltage of the memory cell transistor storing the “1”data.

Subsequently, the row decoder 120 applies the verify voltage VCG_Z tothe selected word line WL at time t23. As illustrated in FIG. 5, theverify voltage VCG_Z is a value set for each zone.

As a result, it is possible to specify that the bit line, in which thecell current does not flows during application of the voltage VCGR andthe cell current flows during application of the verify voltage VCG_Z,corresponds to the memory cell transistor which holds the “0” data andof which the threshold voltage is less than the VCG_Z (that is, a memorycell of a hatched portion in FIG. 11 is specified).

After pre-verify described above, the program and the program verify arerepeated. Differences of the program in the PPP mode from the MLC modeand the SLC mode are that the bit line BL that is specified duringpre-verify is also a target of writing of the “0” data. That is, also inthe unselected zone ZN, 0 V is applied to the bit line BL which isspecified in pre-verify.

The program verify is the same as the MLC mode and the SLC mode.However, the verify voltage used during the program verify has the samevalue as the verify voltage VCG_Z that is used during pre-verify.

As described above, the “0” data is stored and the bit line BLcorresponding to the memory cell transistor of which the thresholdvoltage is less than the VCG_Z is specified by a read operation twiceusing the voltages VCGR and VCG_Z. Such a memory cell transistordescribed above is a memory cell transistor in which, the verify voltageused during writing of the “0” data is less than the VCG_Z, or thethreshold voltage immediately after writing is equal to or greater thanthe VCG_Z, but the threshold voltage decreased after elapse of time.Then, additional writing of the “0” data is also performed on such amemory cell transistor.

Moreover, pre-verify may be performed only at beginning of the writeoperation. Thereafter, the program operation and the program verifyoperation are repeated similar to the MLC mode and the SLC mode.

1.2.3 Specific Example of PPP Mode

Next, a specific example of the write operation of data by the PPP modewill be described with reference to FIGS. 14 to 16. FIGS. 14 to 16 areschematic diagrams of the sense amplifier 130 and the PPP block. InFIGS. 14 to 16, a page size is 16K bytes, 1 page includes 4 zones, andstates are illustrated when the zones ZN0, ZN1, and ZN3 are respectivelyselected.

First, a state when selecting the zone ZN0 will be described withreference to FIG. 14. As illustrated in FIG. 14, data of 4K bytesapplied from the controller 200 is stored in a region corresponding tothe zone ZN0 selected by the column selector 140 in the page buffer ofthe sense amplifier 130. In the other regions (zones ZN1 to ZN3), forexample, all bits are set to be “1” by the sequencer 180. In this state,data is written in the page unit. As a result, writing is substantiallyperformed only in the zone ZN0 and writing is not performed in the zonesZN1 to ZN3.

Next, a state when selecting the zone ZN1 will be described withreference to FIG. 15. FIG. 15 illustrates a case where pre-verify duringselecting the zone ZN1 is disabled. As illustrated in FIG. 15, data of4K bytes applied from the controller 200 is stored in a regioncorresponding to the zone ZN1 selected by the column selector 140 in thepage buffer of the sense amplifier 130. In the other regions (zones ZN0and ZN2 to ZN3), for example, all bits are set to be “1” by thesequencer 180. In this state, data is written in the page unit. As aresult, writing is substantially performed only in the zone ZN1 andwriting is not performed in the zones ZN0 and ZN2 to ZN3. Moreover, ifpre-verify is enabled, the “0” data is also written to the memory celltransistor in which additional writing is necessary based on a result ofpre-verify using the verify voltage VCG_Z1. A state when selecting thezone ZN2 is similar to the one described with reference to FIG. 15.

Next, a state when selecting the zone ZN3 will be described withreference to FIG. 16. When selecting the final zone ZN3, first,pre-verify is performed using the verify voltage VCG_Z3. Then, asillustrated in FIG. 16, data based on a result of pre-verify is storedin the page buffer of the sense amplifier 130. That is, “0” is set in aregion corresponding to the memory cell transistor MT in whichadditional writing is necessary and “1” is set in a region in whichadditional writing is not necessary. Furthermore, data of 4K bytesapplied from the controller 200 is stored in a region corresponding tothe zone ZN3 selected by the column selector 140. In this state, data iswritten in page unit. As a result, additional writing in accordance withthe pre-verify result is also performed in the zones ZN0 to ZN2 in whichwriting is already completed in addition to the zone ZN3.

1.3 Effects of Embodiment

According to the embodiment, it is possible to improve operationreliability of the memory system and the semiconductor memory device.The effect of the embodiment will be described below.

The controller of the memory device manages the memory device using, forexample, various file systems such as a file allocation table (FAT) filesystem. In addition, data that is to be written to the memory device isdata to be immediately made nonvolatile (to be written to thenonvolatile memory cell) and data that is not so. In a case of latterdata, for example, it may be made nonvolatile at a convenient timingsuch as idle time of the controller and the memory device.

Examples of data to be immediately made nonvolatile include managementinformation of the file system, and a size of such data is often smallerthan the page size. In this case, 1 page is divided into a plurality ofregions and it is preferable that writing is performed in data unit lessthan the page size. More specifically, page data, which includessubstantial data only on part of the region and includes writeprohibition data (“1” data in the example) in the other regions, may bewritten. Then, when writing the next data including a size less than thepage size, the same page is selected and substantial data is written inthe region in which the “1” data is written. It is possible toeffectively use the page by using this method.

However, according to this method, influence of program disturbance isdifferent between data that is initially written and data that isinitially written within the same page. That is, the data that is notfinally written is affected by a write operation that is performedthereafter within the same page and the threshold voltage distributionthereof spreads. As a result, there is a concern that reliability of thedata is decreased.

In this regard, according to the embodiment, the controller 200 issuesthe PPP command designating the PPP mode to the NAND flash memory 100.Then, the NAND flash memory 100 recognizes that the data of a size lessthan the page size is to be written by receiving the PPP command. Then,the NAND flash memory 100 determines whether the data to be writtencorresponds to any one of regions (any one of the zones ZN0 to ZN3 inthe above-described embodiment) within the page based on the columnaddress received from the controller 200. Then, if the data correspondsto the region in which writing is finally performed within the page,writing is executed in the page unit and the writing is also performedin zones in which writing is already performed such that the thresholdvoltage distribution within the page is aligned. Thus, even if writingis performed in the data unit of a size less than the page size, it ispossible to suppress a decrease in data reliability.

The configuration described above will be described in detail withreference to FIG. 17. FIG. 17 illustrates a variation of the thresholdvoltage distribution of the memory cell transistors corresponding to thezones ZN0 to ZN3 when data is written to the zone ZN0, ZN1, ZN2, and ZN3in this order for a certain page. In addition, FIG. 17 illustrates acase where pre-verify is not performed in the zones ZN1 and ZN2.

As illustrated in FIG. 17, all the memory cell transistors hold the “1”data and the threshold voltage thereof is less than the VCGR (forexample, less than 0 V) in the initial state (erased state).

In this state, first, the zone ZN0 is written in the PPP mode. As aresult, the “0” data is written in a part of the memory cell transistorcorresponding to the zone ZN0 in compliance with the write data. Thethreshold voltage of the memory cell transistor storing the “0” data isequal to or greater than the VCG_Z0 and, of course, is higher than theVCGR. On the other hand, erroneous writing occurs in the memory celltransistor of the object to be not written (writing of the “1” data) andthe threshold voltage of the memory cell transistor of a part of theobject to be not written is also varied by applying the voltage VPGM tothe selected word line WL. As a result, an upper portion of thethreshold voltage distribution is shifted on a high voltage side. Theportion of threshold voltage shift is indicated by hatched lines in FIG.17.

Next, the zone ZN1 is written in the PPP mode. As a result, the “0” datais written to a part of the memory cell transistor corresponding to thezone ZN1. The threshold voltage of the memory cell transistor storingthe “0” data is equal to or greater than the VCG_Z1 and is higher thanthe VCGR. A series of in this case, the threshold voltage of the memorycell transistor of the object to be not written is also varied byerroneous writing. Furthermore, the threshold voltage of the memory celltransistor in the memory cell transistors corresponding to the zone ZN0in which writing is already completed, in which the “0” data is written,is also varied.

Subsequently, the zone ZN2 is written in the PPP mode. Also in thiscase, similar to the zone ZN1, the threshold voltage of the memory celltransistor of the object to be not written is varied by erroneouswriting.

Finally, the zone ZN3 is written in the PPP mode. In this case, writingis also performed on the memory cell transistors corresponding to thezones ZN0 to ZN2 which are determined additional writing is necessary bya pre-verify result using the verify voltage VCG_Z3.

As a result, when writing of the zone ZN3 is completed, that is, whenwriting is completed for the entire page, the influence of erroneouswriting is substantially eliminated in the threshold voltagedistribution of the memory cell transistors storing the “0” data. Thatis, the influence of erroneous writing received by the zones ZN0 to ZN3is different for each zone. However, an error of the influence issubstantially eliminated and the threshold voltage distribution of thememory cell transistors storing the “0” data is substantially uniformbetween the zones ZN0 to ZN3 by performing writing of the zone ZN3 basedon the pre-verify result. On the other hand, in the threshold voltagedistribution of the “1” data, the influence of erroneous writing remainsin the memory cell transistor of the object to be not written, but ashift amount of the threshold voltage due to the influence issubstantially the same among the zones ZN0 to ZN3. This is because thenumber of times of the influence of erroneous writing that is receivedby the memory cell transistor of the object to be not written is thesame (e.g., 4 times) for all of the zones ZN0 to ZN3. Thus, thethreshold voltage distribution of the “1” data is also substantiallyuniform among the zones ZN0 to ZN3.

As described above, in divided writing in which writing is performed bydividing 1 page into a plurality of regions, the NAND flash memory 100recognizes whether the write data corresponds to any one of regionswithin 1 page. Then, pre-verify is performed at least during writing ofthe final zone ZN3, and writing is performed again in the zones ZN0 toZN2 in which writing is already performed, based on the result, and thethreshold voltage distribution of the regions is adjusted to be uniformwith that of the zone ZN3. Thus, even if divided writing is performed,it is possible to substantially uniformly align the threshold voltagedistribution in the zones.

Moreover, the threshold voltage distribution of the memory celltransistors corresponding to the zones other than the final zone isadjusted during writing the final zone. Thus, writing in zones otherthan the final zone may be rougher compared to writing of the finalzone. This point will be described with reference to FIG. 18. FIG. 18 isa time chart simplifying and illustrating a voltage of a word lineduring writing in the zone ZN0, pre-verify, and writing in the zone ZN3.

As illustrated in FIG. 18, data is written by repeating program and theprogram verify. In this case, the program voltage VPGM is stepped up bythe step-up width ΔVPGM whenever repeating. Then, a step-up widthΔVPGM_Z0 during writing the leading zone ZN0 is greater than a step-upwidth ΔVPGM_Z3 during writing the final zone ZN3. Thus, writing of thezone ZN0 is completed earlier than writing of the zone ZN3. On the otherhand, since the program voltage VPGM is stepped up in a fine step duringwriting the zone ZN3, it is possible to set the threshold voltage with ahigher accuracy when writing the zone ZN3. Writing in the zones ZN1 andZN2 may be carried out with the larger step-up width ΔVPGM_Z0.

Moreover, in FIG. 18, an initial value of the program voltage VPGM isthe same value in the case of writing the zone ZN0 and a case of writingthe zone ZN3, but different values may be used.

2. Second Embodiment

Next, a memory system according to a second embodiment will bedescribed. The embodiment further includes a writing mode that isperformed by dividing 1 page into two parts in the first embodimentdescribed above. Only differences from the first embodiment will bedescribed below. Hereinafter, a writing mode (mode described in thefirst embodiment) that is performed by dividing 1 page into 4 parts isreferred to as a 4 PPP mode and a writing mode that is performed bydividing 1 page into two parts is referred to as a 2 PPP mode.

2.1 Types of Block and Wiring Unit of Data

A memory cell array 110 according to the embodiment further includes a 2PPP block in addition to the MLC block, the SLC block, and the 4 PPPblock described in the first embodiment.

The 2 PPP block is a block in which writing is performed in data unit of½ size of 1 page. FIG. 19 is a schematic diagram illustrating arelationship of 1 page data and a column address corresponding to a dataposition in the 2 PPP block, and corresponds to FIG. 4 in which the 4PPP block is described.

As illustrated in FIG. 19, 1 page in the 2 PPP block includes two zonesZN0 and ZN1. Then, each zone ZN includes a size of 8 KB that is ½ of 16KB.

In the leading zone ZN0, the leading address is CA0 and the finaladdress is CA8191 (CA(8K−1)). In the next zone ZN1, the leading addressis CA8192 (CA8K) and the final address is CA16383 (CA(16K−1)). Then, inthe 2 PPP block, data is written in the zone ZN unit of 8 KB.

Write conditions in the 2 PPP mode are stored in the condition tabledescribed with reference to FIG. 5 in the first embodiment. FIG. 20 is aconceptual diagram of a condition table according to the embodiment.

As illustrated in FIG. 20, the write conditions during selecting theleading zone ZN0 are the same as those during selecting the leading zoneZN0 in the 4 PPP mode. In addition, the write conditions duringselecting the final zone ZN1 are the same as those during selecting thefinal zone ZN3 in the 4 PPP mode.

2.2 Write Operation

Next, a write operation in a memory system 1 according to the embodimentwill be described.

2.2.1 Operation of Controller 200

First, an operation of the controller 200 will be described withreference to FIG. 21. FIG. 21 is a flowchart illustrating the operationof the controller 200 during the write operation.

Differences from the operation described with reference to FIG. 6 in thefirst embodiment are the following points. That is,

(1) If the data size is 4 KB (step S13, YES), the controller 200 issuesa 4 PPP command (step S41).

(2) If the data size is 8 KB (step S40, YES), the controller 200 issuesa 2 PPP command (step S42).

The 4 PPP command and the 2 PPP command are a type of the PPP commanddescribed in the first embodiment, and are respectively commands forcommanding writing in the 4 PPP mode and the 2 PPP mode.

FIG. 22 illustrates a command sequence in the PPP mode. As illustratedin FIG. 22, a difference from FIG. 9 described in the first embodimentis that a plurality of the PPP commands are available. According to theexample of FIG. 22, when the 2 PPP mode is designated, a command “XAH”is issued and when the 4 PPP mode is designated, a command “XBH” isissued. Moreover, 1 page may be divided into 8 parts and a 8 PPP mode inwhich data is written in 2 KB unit may be prepared. In this case, acommand “XCH” is issued.

2.2.2 Operation of NAND Flash Memory 100

Next, an operation of the NAND flash memory 100 will be described withreference to FIG. 23. FIG. 23 is a flowchart illustrating the operationof the NAND flash memory 100 in the write operation and corresponds toFIG. 10 in the first embodiment.

As illustrated in FIG. 23, the PPP command is received (step S20, YES)and if the PPP command is the 4 PPP command (step S50, YES), thesequencer 180 performs writing in the 4 PPP mode. This operation is thesame as the description in the first embodiment and the operation ofsteps S24 to S39 is performed in FIG. 10.

If the received PPP command is the 2 PPP command (step S50, NO), thesequencer 180 performs writing in the 2 PPP mode. If the column addressCA is equal to or greater than CASK (step S52, YES), the column selector140 selects the zone ZN1 (step S53). As a result, the write data of 8Kbytes received from the controller 200 is stored in a regioncorresponding to the zone ZN1 in the page buffer in the sense amplifier130. Subsequently, the sequencer 180 performs pre-verify (step S54) andwriting is performed by the SLC mode based on a result of pre-verify(step S55). That is, the same operation as when selecting the zone ZN3in the 4 PPP mode is performed.

If the column address CA is equal to or less than CA (8K−1) (step S52,NO), the column selector 140 selects the zone ZN0 (step S56). As aresult, the write data of 8 KB received from the controller 200 isstored in a region corresponding to the zone ZN0 in the page buffer inthe sense amplifier 130. If the zone ZN0 is selected, the sequencer 180performs writing in the SLC mode without performing pre-verify (stepS57). That is, the same operation as when selecting the zone ZN0 in the4 PPP mode is performed.

2.3 Effects of Embodiment

According to the embodiment, it is possible to correspond to data ofvarious sizes by including a plurality of the PPP modes. In theembodiment, the case in which data is 4 KB and 8 KB is described as anexample, but is not limited, and it is possible to appropriately selectvarious data sizes.

3. Third Embodiment

Next, a memory system of a third embodiment will be described. In theembodiment, a controller 200 notifies the number of zones and a selectedzone within 1 page to the NAND flash memory 100 in the first or secondembodiment described above. Hereinafter, only differences from the firstand second embodiments will be described.

3.1 Operation of Controller 200

First, an operation of a controller 200 will be described with referenceto FIG. 24. FIG. 24 illustrates a command sequence during selecting aPPP mode.

As illustrated in FIG. 24, in the example, the controller 200 issueszone information following a PPP command “XH” in FIG. 9 described in thefirst embodiment. The zone information is, for example, 8-bit data,upper 4 bits designate the number of the zones, and lower 4 bitsdesignate the selected zone. Thus, if the upper 4 bits are “0010”, the 2PPP mode is selected, if the upper 4 bits are “0100”, the 4 PPP mode isselected, and if the upper 4 bits are “1000”, the 8 PPP mode isselected. Then, if the lower 4 bits are “0000”, the zone ZN0 isselected, if the lower 4 bits are “0001”, the zone ZN1 is selected, ifthe lower 4 bits are “0010”, the zone ZN2 is selected, and this is thesame hereinafter. In other words, the zone information indicates whichPPP mode will be executed and which zone is selected in the selected PPPmode. Additionally, the zone information is a setting value for anoperation and may be referred to as mode information. Of course, modeinformation may be designated in ways that are different from theexample, and the mode information is sufficient as long as the number ofthe zones and the selected zone are designated.

3.2 Operation of NAND Flash Memory 100

Next, an operation of a NAND flash memory 100 will be described withreference to FIG. 25. FIG. 25 is a flowchart illustrating the operationof the NAND flash memory 100 in a 4 PPP mode and corresponds to step S51in FIG. 23 described in the second embodiment.

The sequencer 180, after recognizing the 4 PPP mode based on an upper 4bits of a mode command, sequentially confirms lower 4 bits of modeinformation (step S60). Then, the sequencer 180 recognizes the selectedzone based on the lower 4 bits of the mode information (steps S61 toS63). The others are the same as those of the first embodiment.Moreover, since the selected zone can be recognized by the modeinformation, decode of a column address by a column decoder 150 is notnecessary. That is, a zone that is designated by the column selector 140may be selected according to a command of the sequencer 180.

3.3 Effects of Embodiment

As the embodiment, the number of the zones and the selected zone within1 page may be notified from the controller 200 to the NAND flash memory100.

4. Modification Example, and the Like

As described above, the memory system according to the embodimentsincludes the semiconductor memory device that includes the plurality ofmemory cells arranged in rows and columns; and the controller thatwrites data to the semiconductor memory device in any one mode of thefirst mode (selection of ZN0 of the PPP mode) and the second mode(selection of ZN3 of the PPP mode). In the first mode (selection of ZN0of the PPP mode), for any one of the row addresses, data is written tothe memory cells corresponding to the first column group (ZN0) thatincludes the first column and the second column of which addresses areconsecutive, and is a part of all columns, and the memory cellscorresponding to the second column group (ZN3) that includes the thirdcolumn and the fourth column of which addresses are consecutive, and isdifferent from the first column group is prohibited to be written. Inthe second mode (selection of ZN3 of the PPP mode), data is written tothe memory cells corresponding to the second column group (ZN3) and thememory cells corresponding to the first column group (ZN0) is prohibitedto be written. The semiconductor memory device uses a first settingvalue in the first mode (when selecting the ZN0) and uses a secondsetting value that is different from the first setting value in thesecond mode (when selecting the ZN3) for operation setting values of theword line during the write operation (FIG. 5).

Alternatively, in the memory system, data is written using a firstvoltage (VCG_Z0) in the first mode (selection of the ZN0 of the PPPmode) as the verify voltage. Then, in the second mode (selection of theZN3 of the PPP mode), data is written in the memory cell of the memorycells corresponding to the second column group (ZN3), and the memorycells corresponding to the first column group (ZN0), of which thethreshold voltage is between the first voltage and the second voltage,by using the second voltage (VCG_Z3) different from the first voltage(VCG_Z0) as a verify voltage (FIGS. 11 and 16).

According to the configuration, even if writing is performed in the dataunit less than the page size, it is possible to substantially uniformlyalign the threshold voltage distribution within the same page. Thus,data retention characteristics by the memory cell transistor areimproved and it is possible to improve operation reliability of thesemiconductor memory device and the memory system.

Moreover, the embodiments are not limited to the above descriptions andvarious modifications are possible. For example, in the embodimentsdescribed above, the 2 PPP mode and the 4 PPP mode are described as anexample, but an 8 PPP mode, a 16 PPP mode, a 32 PPP mode may beprovided. If the page size is 16 KB, in a case of the 8 PPP mode, 1 pageis divided into 8 zones of 2 KB respectively. In a case of the 16 PPPmode, 1 page is divided into 16 zones of 1 KB respectively. In a case ofthe 32 PPP mode, 1 page is divided into 32 zones of 512 bytesrespectively. As described above, it is possible to appropriately selectwhether 1 page is divided into several zones or which mode is supported.

Furthermore, the conditions of the bit line during writing of “0” datamay be different between during selecting the final zone and duringselecting other zones. This state is illustrated in FIGS. 26 and 27.FIGS. 26 and 27 illustrate variation in the threshold voltagedistribution during writing. FIG. 26 illustrates when zones other thanthe final zone are selected and FIG. 27 illustrates when the final zoneis selected.

As illustrated in FIG. 26, if the zones other than the final zone areselected, the potential of the bit line BL is a constant value (forexample, 0 V) until the threshold voltage reaches a desire value VCG_Z0,VCG_Z1, or VCG_Z2 (case of 4 PPP). Thus, the variation in the thresholdvoltage by one program is substantially constant in the period of thewrite operation.

On the other hand, as illustrated in FIG. 27, if the final zone isselected, a verify level VCG_QPW that is smaller than the desired valueVCG_Z3 is initially set. Then, the potential of the bit line BL is, forexample, 0 V until the threshold voltage reaches VCG_QPW. After thethreshold voltage reaches VCG_QPW, the potential of the bit line BL isset be a higher voltage and the program is started again. The potentialof the bit line BL becomes high voltage and thereby a potentialdifference between the charge storage layer and the channel becomessmall and the variation amount of the threshold voltage also becomessmall. Of course, during selecting the final zone, the memory celltransistors which fail in pre-verify in the other zones are alsoprogrammed in the same method.

According to this method, writing is roughly performed at a stagedistant to the threshold voltage distribution that is the target andwriting is finely performed at a stage close to the threshold voltagedistribution. Accordingly, it is possible to achieve both improvement ofa write speed and writing with high accuracy.

In addition, in the embodiments described above, the case wherepre-verify is performed only during selecting the final zone and theverify level during selecting the final zone is higher than the verifylevel during selecting the other zone is described as an example.However, the configuration is not limited to the case. FIG. 28illustrates a variation of the threshold voltage distribution ifpre-verify is performed during selecting the zone ZN2 in the 4 PPP mode.In this case, when selecting the zone ZN2, the program is also performedwith respect to a memory cell in which additional writing is necessaryas a result of pre-verify.

Thereafter, when selecting the zone ZN3, the threshold voltage of thememory cell transistors corresponding to the zones ZN0 to ZN2 is varieddue to the influence of erroneous writing, but the influence oferroneous writing received by the memory cell transistor storing the “0”data is only by the influence during writing of the zone ZN3. Thus, ifthe threshold voltage variation of this level can be allowed, pre-verifyis not necessarily required during selecting the final zone. Inaddition, in this case, the relationship of VCG_Z0≤VCG_Z1<VCG_Z2 issatisfied and the VCG_Z3 may be greater than or less than the VCG_Z2,but it is preferable to be the same. Of course, the relationship ofΔVPGM_Z0≥ΔVPGM_Z1>ΔVPGM_Z2 is satisfied. Then, the ΔVPGM_Z3 may begreater than or less than the ΔVPGM_Z2, but it is preferable to be thesame.

In addition, in the embodiments described above, the case where eachzone ZN is selected in order of the column address is described as anexample. For example, in a case of the 4 PPP mode, the case whereselection is performed in order of the zones ZN0, ZN1, ZN2, and ZN3 isdescribed as an example. However, it is not necessarily limited to thisselection order. Writing may be performed based on pre-verify and thepre-verify result during writing the zone ZN that is finally selectedwithin the same page. For example, in the 4 PPP mode, when the zone ZN1is finally selected, pre-verify and writing may be performed by usingthe write conditions regarding the zone ZN3 illustrated in FIG. 5. Thatis, when writing of all zones within 1 page is completed, if thethreshold voltage distribution of each zone is substantially aligned,selection order of the zones ZN does not matter. Then, the conditiontables described in FIGS. 5 and 20 may be tables that store arelationship between the writing orders of the respective zones andwrite conditions corresponding to the orders rather than tables thatstore a relationship between the zones ZN and the write conditions.

In addition, in the command sequence of FIG. 9 or 22, the case where theSLC command “A2H” is issued to the next of the PPP command is describedas an example. However, the NAND flash memory 100 may select the SLCmode in response to receiving the PPP command. In this case, thecontroller 200 is not necessary to issue the SLC command “A2H”.

Furthermore, a read level when reading data may use the voltage VCGRdescribed in FIGS. 17 and 28. However, after writing of the final zoneZN, the threshold voltage of the memory cell transistor that stores the“0” data within the page is entirety shifted on the high voltage side(set to be a value equal to or greater than the verify level VCG_Z3).Thus, as the read level, a value between the VCGR and the VCG_Z3 may beused.

Furthermore, in the embodiments described above, the NAND flash memory,in which the memory cells are stacked in the three dimensions, isdescribed as an example, but it is also possible to apply to a planarNAND flash memory in which the memory cells are arranged in twodimensions on the semiconductor substrate. Furthermore, it is notlimited to the MONOS type in which the charge storage layer is formed ofthe insulating film and it is also possible to apply to a FG type inwhich the charge storage layer is formed of a conductive film.

In addition, the order of each step in the flowcharts described in theabove embodiments is only an example and it is possible to replace theorder if technically feasible.

If one memory cell transistor MT holds two-bit data, the thresholdvoltage may take one of levels of 4 types in accordance with the storeddata. If the levels of 4 types are an erase level, an A level, a Blevel, and a C level sequentially from a low side, a voltage that isapplied to the selected word line during the read operation of the Alevel may be, for example, between 0 V and 0.55 V. The voltage is notlimited thereto and may be between any one of 0.1 V and 0.24 V, 0.21 Vand 0.31 V, 0.31 V and 0.4 V, 0.4 V and 0.5 V, 0.5 V and 0.55 V, and thelike. A voltage applied to the selected word line during reading of theB level is, for example, between 1.5 V and 2.3 V. The voltage is notlimited thereto and may be between any one of 1.65 V and 1.8 V, 1.8 Vand 1.95 V, 1.95 V and 2.1 V, 2.1 V and 2.3 V, and the like. A voltageapplied to the selected word line during reading of the C level is, forexample, between 3.0 V and 4.0 V. The voltage is not limited thereto andmay be between any one of 3.0 V and 3.2 V, 3.2 V and 3.4 V, 3.4 V and3.5 V, 3.5 V and 3.6 V, 3.6 V and 4.0 V, and the like. A time (tR) ofthe read operation may be, for example, between any one of 25 μs and 38μs, 38 μs and 70 μs, 70 μs and 80 μs, and the like.

The write operation includes the program and the program verify. In thewrite operation, a voltage that is initially applied to the selectedword line during program is, for example, between 13.7 V and 14.3 V. Thevoltage is not limited thereto and, for example, may be between any oneof 13.7 V and 14.0 V, 14.0 V and 14.6 V, and the like. Also, a voltageinitially applied to the word line selected when writing an odd-numberedword line may be different from a voltage initially applied to the wordline selected when writing an even-numbered word line. When the programoperation is performed in an incremental step pulse program (ISPP), as avoltage of a step-up, for example, approximately 0.5 V is provided. Avoltage applied to a non-selected word line may be, for example, between6.0 V and 7.3 V. The voltage is not limited thereto and may be between7.3 V and 8.4 V, or may be equal to or less than 6.0 V. A pass voltageto be applied may be different depending on whether the non-selectedword line is an odd-numbered word line or an even-numbered word line. Atime (tProg) of the write operation may be, for example, between 1700 μsand 1800 μs, 1800 μs and 1900 μs, and 1900 μs and 2000 μs.

In the erase operation, a voltage initially applied to the well, whichis arranged on an upper portion of the semiconductor substrate and onwhich the memory cells are arranged, is, for example, between 12 V and13.6 V. The voltage is not limited thereto and may be, for example,between any one of 13.6 V and 14.8 V, 14.8 V and 19.0 V, 19.0 V and 19.8V, 19.8 V and 21 V, and the like. A time (tErase) of the erase operationmay be, for example, between 3000 μs and 4000 μs, 4000 μs and 5000 μs,and 5000 μs and 9000 μs.

In addition, the memory cell may include a structure exemplified below.The memory cell has a charge storage film arranged on the semiconductorsubstrate such as a silicon substrate via a tunnel insulating film afilm thickness of which is 4 nm to 10 nm. The charge storage film can bea stacked structure of an insulating film such as a silicon nitride(SiN) film or a silicon oxynitride (SiON) a film thickness of which is 2nm to 3 nm, and a polysilicon (Poly-Si) film a film thickness of whichis 3 nm to 8 nm. Metal such as ruthenium (Ru) may be added to thepolysilicon film. The memory cell has the insulating film on the chargestorage film. The insulating film has, for example, a silicon oxide(SiO_(x)) film a film thickness of which is 4 nm to 10 nm, which isinterposed between a lower layer High-k film a film thickness of whichis 3 nm to 10 nm and an upper layer High-k film a film thickness ofwhich is 3 nm to 10 nm. A material of the High-k film may be hafniumoxide (HfO) and the like. In addition, the film thickness of the siliconoxide film can be thicker than the film thickness of the High-k film. Acontrol electrode a film thickness of which is 30 nm to 70 nm isprovided on the insulating film via a film having a thickness of 3 nm to10 nm. Here, such a film is, for example, a metal oxide film such astantalum oxide (TaO), a metal nitride film such as tantalum nitride(TaN), and the like. It is possible to use tungsten (W) and the like inthe control electrode. It is possible to arrange an air gap between thememory cells.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor memory device comprising: asemiconductor memory array including a plurality of memory cells and aword line, the plurality of memory cells including a page of memorycells, the plurality of memory cells comprising first, second, third,and fourth memory cells, the word line being electrically connected togates of the first, second, third, and fourth memory cells; and acontrol unit configured to: execute, in response to a first writecommand, a first program operation on the page of memory cells and afirst verify operation on the memory cells of the page using a firstverify voltage, and execute, in response to a second write command, asecond program operation on a first subset of the memory cells of thepage, the first subset of the memory cells including the first andsecond memory cells, and a second verify operation on the first subsetof the memory cells using a second verify voltage when the second writecommand corresponds to the first subset of the memory cells, and executethe second program operation on a second subset of the memory cells ofthe page, the second subset of the memory cells including the third andfourth memory cells, and a third verify operation on the second subsetof the memory cells using a third verify voltage when the second writecommand corresponds to the second subset of the memory cells.
 2. Thesemiconductor memory device according to claim 1, wherein the thirdverify voltage is different from the second verify voltage.
 3. Thesemiconductor memory device according to claim 2, wherein after thesecond program operation on the first subset of the memory cells hasbeen performed and the memory cells of the first subset has passedverification, the second program operation on the second subset of thememory cells is executed.
 4. The semiconductor memory device accordingto claim 3, wherein the third verify voltage is greater than the secondverify voltage.
 5. The semiconductor memory device according to claim 3,wherein the control unit is configured to execute the second programoperation on the first subset of the memory cells by applying a programvoltage of an increased level to the word line in multiple loops, thecontrol unit is configured to execute the second program operation onthe second subset of the memory cells by applying a program voltage ofan increased level to the word line in multiple loops, and an amount ofincrease in the program voltage for each subsequent loop when the secondprogram operation is performed on the memory cells of the first subsetis more than an amount of increase in the program voltage for eachsubsequent loop when the second program operation is performed on thememory cells of the second subset.
 6. The semiconductor memory deviceaccording to claim 5, wherein an increased level in the program voltagefor each subsequent loop when the second program operation is performedon the memory cells of the first subset is less than an increased levelin the program voltage for each subsequent loop when the second programoperation is performed on the memory cells of the second subset.
 7. Thesemiconductor memory device according to claim 3, wherein the controlunit is configured to execute, in response to the issued second writecommand, a pre-verify operation on the memory cells in the first subsetusing the second verify voltage.
 8. The semiconductor memory deviceaccording to claim 7, wherein during the pre-verify operation, a firstread voltage is applied to the word line followed by a second readvoltage that is greater than the first read voltage.
 9. Thesemiconductor memory device according to claim 1, wherein the firstmemory cell is adjacent to the second memory cell, the third memory cellis adjacent to the fourth memory cell, and the first memory cell is notadjacent to the third memory cell and the fourth memory cell.
 10. Thesemiconductor memory device according to claim 1, wherein the firstmemory cell is corresponding to a first column, the second memory cellis corresponding to a second column, the third memory cell iscorresponding to a third column, the fourth memory cell is correspondingto a fourth column, the first and second columns have address numbersthat are contiguous, and the third and fourth columns have addressnumbers that are contiguous and do not overlap with address numbers ofthe first and second columns.
 11. The semiconductor memory deviceaccording to claim 10, wherein the second write command corresponding tothe first subset of the memory cells specifies the address numbers ofthe memory cells in the first subset, and the second write commandcorresponding to the second subset of the memory cells specifies theaddress numbers of the memory cells in the second subset.
 12. Thesemiconductor memory device according to claim 1, wherein the firstwrite command or the second write command is sent from a controllercontrolling the semiconductor memory.
 13. The semiconductor memorydevice according to claim 12, wherein the control unit is configured toread data from the page of the memory cells in response to a readcommand from the controller.
 14. A method of controlling a semiconductormemory device that includes a plurality of memory cells and a word line,the plurality of memory cells including a page of memory cells, theplurality of memory cells comprising first, second, third, and fourthmemory cells, the word line being electrically connected to gates of thefirst, second, third, and fourth memory cells, the method comprising:receiving a first write command or a second write command; in responseto the received first write command, executing a first program operationon the page of memory cells and a first verify operation on the memorycells of the page using a first verify voltage; and in response to thereceived second write command, executing a pre-verify operation on afirst subset of the memory cells using a second verify voltage, thefirst subset of the memory cells including the first and second memorycells, a second program operation on the first subset of the memorycells of the page, and a second verify operation on the first subset ofthe memory cells using the second verify voltage when the receivedsecond write command corresponds to the first subset of the memorycells, and executing a pre-verify operation on a second subset of thememory cells using a third verify voltage, the second subset of thememory cells including the third and fourth memory cells, the secondprogram operation on a second subset of the memory cells of the page,and a third verify operation on the second subset of the memory cellsusing the third verify voltage when the received second write commandcorresponds to the second subset of the memory cells.
 15. The methodaccording to claim 14, wherein the first write command or the secondwrite command is sent from a controller.
 16. The method according toclaim 14, wherein the third verify voltage is different from the secondverify voltage.
 17. The method according to claim 16, wherein after thesecond program operation on the first subset of the memory cells hasbeen performed and the memory cells of the first subset has passedverification, the second program operation on the second subset of thememory cells is executed.
 18. The method according to claim 17, whereinthe third verify voltage is greater than the second verify voltage. 19.The method according to claim 17, wherein the executing the secondprogram operation on the first subset of the memory cells includesapplying a program voltage of an increased level to the word line inmultiple loops, the executing the second program operation on the secondsubset of the memory cells includes applying a program voltage of anincreased level to the word line in multiple loops, and an amount ofincrease in the program voltage for each subsequent loop when the secondprogram operation is performed on the memory cells of the first subsetis more than an amount of increase in the program voltage for eachsubsequent loop when the second program operation is performed on thememory cells of the second subset.
 20. The method according to claim 19,wherein an increased level in the program voltage for each subsequentloop when the second program operation is performed on the memory cellsof the first subset is less than an increased level in the programvoltage for each subsequent loop when the second program operation isperformed on the memory cells of the second subset.